Design automation for monolithic 3d devices

ABSTRACT

A method of designing a 3D Integrated Circuit, the method including: performing partitioning to at least a logic strata, the logic strata including logic, and to a memory strata, the memory strata including memory; then performing a first placement of the memory strata using a 2D placer executed by a computer, where the 2D placer is a Computer Aided Design (CAD) tool for two-dimensional devices, where the 3D Integrated Circuit includes through silicon vias for connection between the logic strata and the memory strata; and performing a second placement of the logic strata based on the first placement, where the memory includes a first memory array, where the logic includes a first logic circuit controlling the first memory array, where the first placement includes placement of the first memory array, and the second placement includes placement of the first logic circuit based on the placement of the first memory array.

CROSS-REFERENCE OF RELATED APPLICATIONS

This application is a continuation-in-part application of U.S. patentapplication Ser. No. 17/306,948, which was filed on May 4, 2021, whichis a continuation-in-part application of U.S. patent application Ser.No. 16/149,517, which was filed on Oct. 2, 2018 (now U.S. Pat. No.11,030,371 issued on Jun. 8, 2021), which is a continuation-in-partapplication of U.S. patent application Ser. No. 14/672,202, which wasfiled on Mar. 29, 2015 (now U.S. Pat. No. 10,127,344 issued on Nov. 13,2018), which is a continuation application of U.S. patent applicationSer. No. 13/862,537, which was filed on Apr. 15, 2013 (now U.S. Pat. No.9,021,414 issued on Apr. 28, 2015), the entire contents of the foregoingare incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

This application relates to the general field of computer aided designof monolithic three-dimensional integrated circuits.

2. Discussion of Background Art

Use of computer programs for automating the design of electroniccircuits, and particularly for assisting in the design of semiconductorintegrated circuits, has been known for at least forty years. This fieldof Computer-Aided Design (CAD) encompasses the spectrum of engineeringactivities from early capture of the design idea, through its variousrefinements (both automatic and manual), modeling, simulations, down toits mapping to physical objects, partitioning and floor-planning,placement and routing, rule-checking and mask-making. The first part ofthese activities occurs in the logical domain, before mapping tophysical objects (macros and cells) occurs, and is known as logicdesign. The part of the process after mapping the logical design tophysical objects is known as physical design.

The rapid shrinking of manufacturable transistor dimensions onsemiconductor wafers gave rise to a corresponding explosion of thedesign sizes that CAD tools need to handle. Modern designs routinelyexceed tens and hundreds of millions of transistors and require massiveand elaborate CAD tools to handle them.

A typical physical design process is illustrated in FIG. 1. It may startwith a netlist 105 made of physical objects, and a set of constraints110 derived from the logical part of the design flow. Netlist 105 withconstraints 110 may be partitioned into a small set of blocks, on theorder of 1 to 100 using a program called partitioner 115, which mayproduce a modified partitioned netlist 135 and modified netlistconstraints 140. These, in turn, may be fed into a floor-planner 145that may arrange these blocks mosaic-like, while respecting designnetlist constraints 140, on a rectangular frame that may outline thephysical footprint of the final integrated circuit (IC) and produce anewly modified netlist 155 and newly modified design constraints 160.The objects within each floor-planned block of newly modified netlist155 may then be assigned a location within that block, while respectingnewly modified design constraints 160, using the placer 165. Followingthis step the placed design netlist 175 and modified design constraints180 may be passed to other CAD tools that may perform routing utilizingrouter 185, and producing routed netlist 190 that may be passeddownstream for rule checking and further processing 195 for the final ICmanufacturing. Throughout the CAD process the various CAD tools may use,in addition to the design itself and its constraints, a variety oflibraries that describe the netlist objects in their variousabstractions, and rules files that define the permissible actions onobjects and legal relations between them, and between objects and anabstraction of the underlying technology layers. Further, userintervention may be required at the various steps above.

Traditionally CAD tools operate with the understanding that theunderlying transistors are arranged in a single planar layer. In recentyears some tools have expanded to consider transistors arranged onmultiple stacked layers, where the layers may be connected throughrelatively large Through-Silicon Vias (TSV) such as described in Xie,Y., Cong, J., Sapatnekar, S. “Three-Dimensional Integrated CircuitDesign,” Springer, 2010. The focus of this expansion, however, isbenefitting from the three-dimensional stacking while minimizing the useof the very large and expensive TSVs.

SUMMARY

The current invention extends CAD tool functionality to operate with amonolithic three-dimensional (3D) manufacturing process. The keydifference between a monolithic 3D process and a stacked-layer processwhere the layers are connected using TSVs is in the size of theinter-layer connection. TSVs are very large relative to advancedlithography feature size, and TSV scaling is not related to lithographybut rather to the ability to etch and fill holes at very extreme aspectratio, and the ability to handle extremely thin wafers. Today bestetching and filling aspect ratio is roughly 10:1 and consequently thethinnest wafer that could be properly handled are roughly 50 micronthick with TSV diameter of roughly 5 micron. In contrast inter-layerconnections of a monolithic 3D process scales with semiconductor scalingand is already below 100 nm, and will keep on scaling down as theindustry continues with dimensional scaling.

Monolithic 3D technology: With this approach, multiple layers oftransistors and wires can be monolithically constructed. Some monolithic3D and 3DIC approaches are described in U.S. Pat. Nos. 8,273,610,8,298,875, 8,362,482, 8,378,715, 8,379,458, 8,450,804, 8,557,632,8,574,929, 8,581,349, 8,642,416, 8,669,778, 8,674,470, 8,687,399,8,742,476, 8,803,206, 8,836,073, 8,902,663, 8,994,404, 9,023,688,9,029,173, 9,030,858, 9,117,749, 9,142,553, 9,219,005, 9,385,058,9,406,670, 9,460,978, 9,509,313, 9,640,531, 9,691,760, 9,711,407,9,721,927, 9,799,761, 9,871,034, 9,953,870, 9,953,994, 10,014,292,10,014,318, 10,515,981, 10,892,016; and pending U.S. Patent ApplicationPublications and application Ser. Nos. 14/642,724, 15/150,395,15/173,686, 16/337,665, 16/558,304, 16/649,660, 16/836,659, 17/151,867,62/651,722; 62/681,249, 62/713,345, 62/770,751, 62/952,222, 62/824,288,63/075,067, 63/091,307, 63/115,000, 2020/0013791, 16/558,304; and PCTApplications (and Publications): PCT/US2010/052093, PCT/US2011/042071(WO2012/015550), PCT/US2016/52726 (WO2017053329), PCT/US2017/052359(WO2018/071143), PCT/US2018/016759 (WO2018144957), andPCT/US2018/52332(WO 2019/060798). The entire contents of the foregoingpatents, publications, and applications are incorporated herein byreference.

Electro-Optics: There is also work done for integrated monolithic 3Dincluding layers of different crystals, such as U.S. Pat. Nos.8,283,215, 8,163,581, 8,753,913, 8,823,122, 9,197,804, 9,419,031,9,941,319, 10,679,977, and 10,943,934. The entire contents of theforegoing patents, publications, and applications are incorporatedherein by reference.

The implication of the abovementioned difference is that optimizationprocesses of CAD tools for TSV-based processes should focus onminimizing the number of TSVs. In contrast, in monolithic 3D theinter-layer connectivity is much denser and CAD tools should focus onleveraging that large inter-layer connectivity to optimally placeobjects on different layers based on the layers' potentially disparatecharacteristics, and to increase the physical proximity of objects in 3Dspace as compared to a 2D plane. The current invention describesembodiments such as optimizations of CAD tools for monolithic 3Dtechnology.

In one aspect, a method of designing a 3D Integrated Circuit, the methodcomprising: performing placement using a 2D placer, performing placementfor at least a first strata and a second strata, and then performingrouting and completing the physical design of said 3D IntegratedCircuit.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: performing partitioning to at least a first strataand a second strata, then performing placement using a 2D placer, andthen performing routing and completing the physical design of said 3DIntegrated Circuit.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: performing placement using a 2D placer, splitting theplaced cells into at least a first group and a second group of similartotal area, using said 2D placer to place said second group on a secondstrata, using said 2D placer to place said first group on a firststrata, and then performing routing and completing the physical designof said 3D Integrated Circuit.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: performing partitioning to at least a first strataand a second strata; then performing a first placement of said firststrata using a 2D placer executed by a computer, wherein said 2D placeris a Computer Aided Design (CAD) tool currently used in the industry fortwo-dimensional devices; and performing a second placement of saidsecond strata based on said first placement, wherein said partitioningcomprises a partition between logic and memory, and wherein said logiccomprises at least one decoder representation for said memory.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: performing partitioning to at least a first strataand a second strata; then performing a first placement of said firststrata using a 2D placer executed by a computer, wherein said 2D placeris a Computer Aided Design (CAD) tool currently used in the industry fortwo-dimensional devices; and performing a second placement of saidsecond strata based on said first placement, wherein said partitioningcomprises a partition between logic and memory, and wherein said logiccomprises at least one decoder for said memory.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: performing partitioning to at least a first strataand a second strata; then performing a first placement of said firststrata using a 2D placer executed by a computer, wherein said 2D placeris a Computer Aided Design (CAD) tool currently used in the industry fortwo-dimensional devices; and performing a second placement of saidsecond strata based on said first placement, wherein said partitioningcomprises splitting a plurality of cells into a high performance groupto said first strata and a low performance group to said second strata.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: performing partitioning to at least a logic stratacomprising logic and a memory strata comprising memory; then performinga first placement of said logic strata using a 2D placer executed by acomputer, wherein said 2D placer is a Computer Aided Design (CAD) toolfor two-dimensional devices; wherein said 3D Integrated Circuitcomprises through silicon vias for connection between said logic strataand said memory strata; and performing a second placement of said memorystrata based on said first placement, wherein said logic comprises atleast one decoder representation for said memory, wherein said at leastone decoder representation has a virtual size with width of contacts forsaid through silicon vias, and wherein said performing a first placementcomprises using said decoder representation instead of an actual memorydecoder.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: performing partitioning to at least a logic stratacomprising logic and a memory strata comprising memory; then performinga first placement of said logic strata using a 2D placer executed by acomputer, wherein said 2D placer is a Computer Aided Design (CAD) toolfor two-dimensional devices; and performing a second placement of saidmemory strata based on said first placement, wherein said logiccomprises at least one decoder for said memory, and wherein said memorycomprises at least a first memory and a second memory, wherein saidfirst memory comprises first memory decoders and said second memorycomprises second memory decoders, wherein said 2D placer is set so saidsecond memory decoders are not placed within a rectangle defined by theplacement of said first memory decoders.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: performing partitioning to at least a logic stratacomprising logic and a memory strata comprising memory; then performinga first placement of said logic strata using a 2D placer executed by acomputer, wherein said 2D placer is a Computer Aided Design (CAD) toolfor two-dimensional devices; and performing a second placement of saidmemory strata based on said first placement, wherein said partitioningcomprises a step of assigning at least one memory block to said logicstrata for improved balancing of said logic strata area and said memorystrata area.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: performing partitioning to at least a logic stratacomprising logic and a memory strata comprising memory; then performinga first placement of said logic strata using a 2D placer executed by acomputer, wherein said 2D placer is a Computer Aided Design (CAD) toolfor two-dimensional devices, wherein said 3D Integrated Circuitcomprises through silicon vias for connection between said logic strataand said memory strata; and performing a second placement of said memorystrata based on said first placement, wherein said memory comprises afirst memory array, wherein said logic comprises a first logic circuitcontrolling said first memory array, wherein said first placementcomprises placement of said first logic circuit, and wherein said secondplacement comprises placement of said first memory array based on saidplacement of said first logic circuit.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: performing partitioning to at least a logic stratacomprising logic and a memory strata comprising memory; then performinga first placement of said logic strata using a 2D placer executed by acomputer, wherein said 2D placer is a Computer Aided Design (CAD) toolfor two-dimensional devices; and performing a second placement of saidmemory strata based on said first placement, wherein said logiccomprises at least one decoder representation for said memory, andwherein said memory comprises at least a first memory and a secondmemory, wherein said first memory comprises a first memory decoderrepresentation and said second memory comprises a second memory decoderrepresentation, wherein said 2D placer is set so said second memorydecoder representation is not placed within a rectangle defined byplacement of said first memory decoder representation.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: performing partitioning to at least a logic stratacomprising logic and a memory strata comprising memory; then performinga first placement of said logic strata using a 2D placer executed by acomputer, wherein said 2D placer is a Computer Aided Design (CAD) toolfor two-dimensional devices; and performing a second placement of saidmemory strata based on said first placement, wherein said partitioningcomprises a step of assigning at least one logic block to said memorystrata for improved balancing of said logic strata area and said memorystrata area.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: performing partitioning to at least a logic strata,said logic strata comprising logic, and to a memory strata, said memorystrata comprising memory; then performing a first placement of saidmemory strata using a 2D placer executed by a computer, wherein said 2Dplacer is a Computer Aided Design (CAD) tool for two-dimensionaldevices, wherein said 3D Integrated Circuit comprises through siliconvias for connection between said logic strata and said memory strata;and performing a second placement of said logic strata based on saidfirst placement, wherein said memory comprises a first memory array,wherein said logic comprises a first logic circuit controlling saidfirst memory array, wherein said first placement comprises placement ofsaid first memory array, and wherein said second placement comprisesplacement of said first logic circuit based on said placement of saidfirst memory array.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: wherein said 3D Integrated Circuit comprises at leasta first strata and a second strata, providing placement data of saidfirst strata; performing a placement of said second strata using a 2Dplacer executed by a computer, wherein said placement of said secondstrata is based on said placement data, wherein said 2D placer is aComputer Aided Design (CAD) tool for two-dimensional devices, andwherein said second strata comprises first routing layers; andperforming a routing of said second strata routing layers using a 2Drouter executed by said computer, wherein said 2D router is a ComputerAided Design (CAD) tool for two-dimensional devices.

In another aspect, a method of designing a 3D Integrated Circuit, themethod comprising: providing a device design, a first library, and asecond library; performing a synthesis step utilizing at least twolibraries, wherein said synthesis step results in a first netlist and asecond netlist; then performing a first placement of a first strata forsaid first netlist using a 2D placer executed by a computer, whereinsaid 2D placer is a Computer Aided Design (CAD) tool for two-dimensionaldevices; performing a second placement of a second strata for saidsecond netlist using said 2D placer executed by said computer, whereinsaid 2D placer is a Computer Aided Design (CAD) tool for two-dimensionaldevices.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of the invention will be understood and appreciatedmore fully from the following detailed description, taken in conjunctionwith the drawings in which:

FIG. 1 is an exemplary drawing illustration of a typical CAD designflow;

FIG. 2 is an exemplary drawing illustration of a flowchart to use layerattributes during a coarsening or uncoarsening stages of partitioning;

FIG. 3 is an exemplary drawing illustration of placement of a memoryblock split into core bit-cell array and its decoding and driving logic;

FIG. 4 is an exemplary drawing illustration of a flow diagram to balancethe two strata; and

FIG. 5 is an exemplary drawing illustration of a flow using a 2D Placerfor placing a netlist on two or more strata.

DETAILED DESCRIPTION

Embodiments of the present invention are described herein with referenceto the drawing figures. Persons of ordinary skill in the art willappreciate that the description and figures illustrate rather than limitthe invention and that in general the figures are not drawn to scale forclarity of presentation. Such skilled persons will also realize thatmany more embodiments are possible by applying the inventive principlescontained herein and that such embodiments fall within the scope of theinvention which is not to be limited except by the appended claims.

There are multiple known ways to partition a design, but the essentialapproach described in Metis (Karypis, G., Kumar, V., “METIS—UnstructuredGraph Partitioning and Sparse Matrix Ordering,” 1995) subsumes most ofthem in modern CAD tools. It may consist of three phases: graphcoarsening through clustering, followed by partitioning of the smallerresulting graph, followed by an uncoarsening phase. Most partitionerswill include additional design constraints, such as timing slack ofnets, in the optimization costs during the coarsening and uncoarseningphases, in addition to minimizing the number of nets crossing thepartition boundary (the cut). The current invention suggests includingdisparate technology characteristics as an additional constraint tooptimize.

More specifically, different active logic layers in a stacked monolithic3D IC can differ in their lithography feature sizes, the more aggressiveones being faster but more expensive to manufacture. In a 3D IC deviceevery stratum may be fabricated in its own process with, for example,its own set of design rules, unlike 2D IC wherein all transistors existon the same stratum and will be processed together with the sameprocess. Accordingly the 3D IC partitioning of device circuits toindividual strata could be based on which types of circuits would beefficient to process together. Such decision could be based on acriterion, for example, such as the type of lithography requirements. Ina modern IC the cost of lithography dominates the end-device cost.Consequently it may be effective to maximize the number of strata thatutilize lower cost lithography processes and minimizing the number ofstrata that might require the most aggressive and expensive lithography,for example, containing high speed circuits. Yet other strata mayinclude repetitive memory circuits that might use a spacer-basedlithography scheme which may lower costs even further. The slower logicof a device circuit might be partitioned to use older process nodecircuits with much lower cost lithography. Yet other strata could bededicated to I/O circuits that might also use lower cost lithography.Strata can differ in their number of metal routing layers, the largernumber of such offering more connectivity and hence denser areautilization, albeit at a higher manufacturing cost. Strata can differ inthe power dissipation and leakage of the transistors, for example, lowerpower consumption portions may be grouped on a strata and/or slowerspeed of operation portions, and/or lower leakage portions. Suchdifferences can be translated into a “cost” of the cut underoptimization and create new dimensions of optimization of monolithic 3Dstructures. Strata can differ in the process design rules utilized toform the devices and circuits in each stratum, for example, a firststratum may have a set of design rules that is one or more process nodesmore advanced than a second stratum set of design rules.

An additional embodiment of the invention is the partitioning ofmemories into different memory layers in a stacked monolithic 3D IC. Forexample, the layers can differ by their suitability to types of memorythey can implement, such as volatile versus non-volatile, or dynamicversus static. In this case the affinity of the memory type used in thedesign to the available memory layer characteristics may be translatedinto either a hard affinity attribute (if the object must be placed on agiven layer type) or into a “cost” attribute and may be included in thepartitioner. Hard affinity attributes may force the partitioner tocluster only objects with compatible attributes.

An additional embodiment of the invention is partitioning betweenvarious analog functions, including input and output functions, and therest of the logic and memory of the design, where the analog elementsmay be mapped onto one or more potentially disparate analog layers in astacked monolithic 3D IC. The analog layers can vary in theirlithography processes, or in their semiconductor material bases such asSilicon, Germanium, or composite III-V semiconductors, for example,Gallium-Arsenide or Indium-Phosphide. Similar to the case of memorydescribed above, the affinity of the analog object type used in thedesign to the available analog layer characteristics may be translatedeither into a hard affinity or into a “cost” function and may beincluded in the partitioner. As before, hard affinity attributes mayforce the partitioner to cluster only objects with compatibleattributes.

Another criterion for partition could be the thickness of the siliconlayer. For high speed logic it might be desirable to use fully depletedtransistors, such as, for example, FinFet or planar fully depleted SOItransistors, that may require a relatively thin silicon layer, forexample, as thin as 25 nm, 10 nm or 5 nm. I/O (Input/Output), Analog,high voltage circuits such as charge pumps, and RF (Radio Frequency)circuits might benefit from a thicker semiconductor material base inthat strata, for example mono-crystalline silicon of for example 50 nm,100 nm or 200 nm, and accordingly it might be preferred to have thosecircuits on different strata than the fully depleted devices andcircuits.

An additional embodiment of the invention is partitioning a design thatincludes a feasible combination of objects described previously. Morespecifically, partitioning of designs may include a combination of logicelements, memory elements, and analog elements, into multiple layers ofdisparate characteristics of each kind.

An additional embodiment of the invention includes partitioning of amemory block into its core bit-cell array that is targeted for a memorylayer, and some or all of its decoding and driving logic that istargeted for a logic layer. It is the rich vertical connectivityavailable in a monolithic 3D process that allows such partitioning to beconsidered in the partitioner.

An additional embodiment of the invention includes partitioning of adesign into elements that span a single layer versus those that spanmultiple adjacent vertical layers. Similar to other specializedpartitions, this characteristic can be translated into a “cost” or itcan be used to drive a hard partitioning in the partitioner. Further, ifboth multi-layer and single-layer variants of an object are present, thepartitioner can select the best-fitting variant based on global designconsiderations together with the overall system cost.

FIG. 2 is a drawing illustration of an exemplary flow implementingadditional constraints such as those described above into thepartitioner. Design netlist 205 with its design constraints 210 may besynthesized with a synthesis program 215 producing synthesized netlist225. Timing analysis 230 may be performed on the synthesized netlist 225and a timing slack—the difference between the expected clock cycle andthe intrinsic delay of the object in the path—may be annotated on eachnet thereby producing the annotated netlist 235. During the timinganalysis, estimates of net delays may be added based on a variety ofconsiderations such as, for example, fanout and/or floorplaninformation. Timing slack, the difference between its budgeted time andits estimated time delay, may be computed for each net. The larger thetiming slack, the less critical is the net and the objects at itsbeginning and end. A partitioner 240 may then partition annotatednetlist 235 into partitioned netlist 245, producing new netlistconstraints 250. The newly partitioned netlist 245 may now be remappedusing synthesis program 215 with each partition targeted at anappropriate, and potentially different, technology producing the finalheterogeneous partitioned netlist 265. Synthesizing partitions to aslower and less expensive (or less power hungry) technology based on theamount of timing slack may allow for cost optimization. In contrast,objects with incompatible hard affinity attributes are generally notclustered together during the coarsening and uncoarsening phases andconsequently may likely end up in homogenous partitions. Two or morelibraries may be utilized for synthesis program 215.

The partitioned design will typically be followed by a floor planningstage and afterward, the design will typically move to a placement step,wherein the objects within each floor-planned block will be assigned alocation within that block's boundary.

Of unique concern during the 3D floor-planning and the placement stagemay be instances where the core bit-cell array of a memory block hasbeen separated from its decoding and driving logic, the former beingplaced on a memory layer and the latter on a logic layer. In particular,the floor-planning of these blocks should allow for sufficient directvertical overlap so that a symmetrical arrangement of verticalconnections between the two parts of the memory block can be guaranteed.Further, the placer may use this overlap to place both parts of thememory block centered one above the other to achieve maximal symmetry.This is to facilitate relative uniformity of delays that suchinterconnect typically requires.

FIG. 3 is a drawing illustration describing the process of working witha split memory block. Memory block 300 may be split into core bit-cellarray 302 and memory decoder/drivers 304. Each of those two componentsmay end up in a different partition after a partitioning step: the corebit-cell array 302 in memory partition 312, and the memorydecoder/drivers 304 in logic partition 314. The floor-planner may placememory partition 312 and logic partition 314 on two different stratalayers, layer one 322 and layer two 324, according to partitionattributes, and makes sure that their (core bit-cell array 302 andmemory decoder/drivers 304) footprints overlap vertically in a properorientation. After floor-planning, the placer may place the corebit-cell array 302 on layer one 322 and the memory decoders/drivers 304on layer two 324 with a common radial symmetry to facilitate uniformtiming to the core bit-cell array 302.

Persons of ordinary skill in the art will appreciate that theillustrations in FIGS. 2 and 3 are exemplary only and are not drawn toscale. Such skilled persons will further appreciate that many variationsmay be possible such as, for example, in some cases it might bepreferred to have the memory decoders in the logic stratum and to havethe bit-cells in the memory stratum. Many other modifications within thescope of the illustrated embodiments of the invention described hereinwill suggest themselves to such skilled persons after reading thisspecification. Thus the invention is to be limited only by the appendedclaims.

An additional advantage of partitioning based on manufacturingconsideration is that with proper set up and support utilities, existing2D Place & Route design tools could be used for 3D IC design as outlinedin the following sections.

FIG. 4 illustrates a flow diagram to balance the two strata in case thatthe required area for the bit-cells is larger than the area required forthe logic and the memory decoders. In such case an option may exist totransfer the smaller memories from one stratum to another stratum untilthe area for the two strata had been balanced. After loading netlist 410and estimating the total area of memory partition (FM) and of logicpartition made of logic (FL) and memory decoders (FD) in step 420, theflow systematically transfers the smallest memory blocks from the memorypartition to the logic partition and adjusts the estimated costs 440.Once the memory partition has sufficiently shrunk and its estimated sizeis smaller than that of the logic partition 430, the process terminates450.

If the area required for the bit-cells is far smaller than the area forlogic and the memory decoders, then a similar algorithm can offer thechoice to selectively add memory decoders, or other compatible,typically analog, circuitry to the memory stratum to better balance theutilization of the two strata. In such case, however, both strata willneed to support both memory and logic and the advantage of tuning thememory stratum process and design to memory only will be mostly negated.

Typically the memory used in designs is assumed to be a static RAM(“SRAM”) with each SRAM cell made of more than one, for example six, oreven eight, transistors. In a 3D IC environment it could be feasible touse a one transistor memory cell instead. For example, the use of a DRAMcell might be possible with the memory stratum optimized accordingly toDRAM process and design, and may use either a stack capacitor or atrench capacitor based memory cell, typically stack capacitors if it isa top stratum or trench capacitors if it is the bottom stratum. Othertypes of memories could also be considered, such as, for example,Spin-Transfer Torque RAM (STT-RAM) or Zeno Semiconductor's floating bodyRAM with two stable states. Having a stratum dedicated to memorybit-cells makes it easier to use a special memory process flow that maybe required for such stratum.

Once the allocation of structures to the bit-cells strata and the logicand memory decoder strata has been done, the next step is to place androute each strata and the connection between them.

This could be done using 2D tools in the following exemplary manner.First, the memory decoders may be introduced to the Placer asspecialized L-shaped cells such that other logic, but no other memorydecoder, is allowed in the empty space in the rectangle defined by itsL-shape.

In the next step the 2D Placer may perform the placement on the logicstratum.

Then the bit-cell arrays may be placed in the memory stratum accordingto the placement of their respective memory decoders on the logicstratum.

Finally, the logic stratum may be routed, with the vertical connectionsbetween memory decoders and their bit-cell arrays occurringautomatically as a part of the strata abutment.

If the utilization of memory stratum is low, non-memory circuitry may beadded to that memory stratum that shares some of its characteristics.Examples of such are input and output cells (“IO”) and analog functionssuch as Phase Lock Loop (“PLL”).

The place and route flow could be similar to the one above. First a2D-Placer could be used to place the logic stratum, then the bit-cellarrays may be placed on the memory stratum according to the placement oftheir respective memory decoders, and then a 2D-Placer could be used toplace the other elements in the memory stratum. In such case theinter-strata nets are defined as virtual IOs for each stratum 2D placeand route process.

The location of such inter-strata net virtual 10 point can be defined asa location as directly as possible above or below, depending on thedirection of the inter-strata crossing, of the source terminal of theinter-strata net. Another possible option is for this virtual IO bedefined in the proximity, above or below as necessary, of thecenter-of-gravity of the inter-strata net on the stratum that is placedfirst.

When the bit-cell area is too small, the decoders may be placed at thebit-cell strata. This could be done also to reduce the number ofconnections between the strata as the decoder function is to expand theaddress from n lines of address lines to twice 2**(n/2) lines memoryselect lines. A simple option is to use a similar flow as has beenpresented before but represent the decoders not with the actual layoutsize but with virtual size with width of contacts for Through LayerVias. But keep the keep out zone for other decoders the same as before.In this way the 2D Placer can place the logic cell properly for thelogic strata, and the memory strata which could include the bit-cellsand the decoder would be defined according to the placed logic strata.

Another type of partition to two strata could be between high speedlogic and low power logic or alternatively lower speed logic using olderprocess node.

In both cases a 2D-Placer could be used first to place the high speedlogic, and then place the other, low power or lower speed logic, stratumwith a 2D Placer using the placement of the high speed stratum to drivethe placement on the second stratum similar to the flow described above.

Additional advantage of the 3D IC technology is in its ease of use for aplatform-based design. One or more strata could be designed, and evenpre-manufactured, as a platform for multiple applications withplatform's connections brought up to the top routing layer. Then,additional strata can be designed and customized for each applicationand placed on top of the pre-designed platform. In such process theplatform strata would first be placed and routed using the 2D Placer andRouter as described previously. Then the custom stratum could be placedand routed using a 2D Placer and Router with connections to thepredefined contacts on the top level of the underlying platform design.

A 2D Placer could be used also for multiple strata placement of cellsthat are not partitioned first by some of the methods presented here.One option is to use a 2D partitioner such as Metis to partition thedesign into K partitions, each corresponding to one of K strata.

FIG. 5 illustrates a flow using a 2D Placer for placing a netlist on twostrata. A similar flow could be used for three or more strata.

After loading the netlist 505 and resizing the dimensions of the cellsby 0.71 in each direction 510, a 2D placement 515 is performed. A seedfor the placement is picked from the center of the design and assignedto the first (red) partition 520. Based on the relative size of bothpartitions 530 the next cell is added to either the first (red) or thesecond (blue) partition. When the blue partition is smaller, between thecells that are currently placed in a close proximity to a Red Cellselect the one with minimum connection to the red partition and add itto the blue partition 535. Similarly, when the red partition is smaller,between the cells that are currently placed in a close proximity to aBlue Cell select the one with minimum connection to the red partitionand add it to the red partition 540. Once the process leaves nounassigned cells 525 it moves to the next step 545. Centers-of-gravity(“COG”) of all inter-strata nets are calculated based on the original 2Dplacement 515 and used to create virtual IOs crossing the strataboundary at that location. Library cells are restored to their originalsizes and 2D placement is performed on the first stratum with the firstpartition. The COGs (and virtual IOs) are adjusted based on the newplacement, and the second partition placed in 2D on the second stratum.Optionally the COG and virtual IOs are readjusted again based on thefinal placement of both strata, and a 2D router is run on each stratumseparately 550, after which the place and route process terminates 555and the physical design of the 3DIC may be competed.

The flow of FIG. 5 could be modified for steps blue partition 535 andred partition 540 so instead of using a criterion of “minimumconnections” to the other partition, other criteria could be used. Anexample of alternate criteria could be “maximum Blue connection” forstep blue partition 535: and “maximum Red connection” for step redpartition 540.

It will also be appreciated by persons of ordinary skill in the art thatthe invention is not limited to what has been particularly shown anddescribed hereinabove. For example, drawings or illustrations may notshow all device possibilities for clarity in illustration. Rather, thescope of the invention includes both combinations and sub-combinationsof the various features described herein above as well as modificationsand variations which would occur to such skilled persons upon readingthe foregoing description. Thus the invention is to be limited only bythe appended claims.

We claim:
 1. A method of designing a 3D Integrated Circuit, the methodcomprising: performing partitioning to at least a logic strata, saidlogic strata comprising logic, and to a memory strata, said memorystrata comprising memory; then performing a first placement of saidmemory strata using a 2D placer executed by a computer, wherein said 2Dplacer is a Computer Aided Design (CAD) tool for two-dimensionaldevices, wherein said 3D Integrated Circuit comprises through siliconvias for connection between said logic strata and said memory strata;and performing a second placement of said logic strata based on saidfirst placement, wherein said memory comprises a first memory array,wherein said logic comprises a first logic circuit controlling saidfirst memory array, wherein said first placement comprises placement ofsaid first memory array, and wherein said second placement comprisesplacement of said first logic circuit based on said placement of saidfirst memory array.
 2. The method according to claim 1, wherein saidlogic strata comprises first routing layers, wherein said memory stratacomprises second routing layers, and said method further comprising:performing routing for said first routing layers and said second routinglayers.
 3. The method according to claim 1, wherein said first logiccircuit comprises at least one decoder or at least one decoderrepresentation.
 4. The method according to claim 1, wherein said memorycomprises a second memory array, wherein said first memory arraycomprises a first memory decoder, wherein said second memory arraycomprises a second memory decoder, and wherein said 2D placer is set sosaid second memory decoder is not placed within a rectangle at leastpartially defined by placement of said first memory decoder.
 5. Themethod according to claim 1, wherein said first logic circuit comprisesat least one decoder representation, wherein said decoder representationis placed on said logic strata, wherein an actual memory decoder andassociated bit cells are placed on said memory strata, and whereinplacement of said decoder representation is based on said first memoryarray placement.
 6. The method according to claim 1, wherein results ofsaid method of designing a 3D Integrated Circuit are utilized to form anintegrated circuit.
 7. A method of designing a 3D Integrated Circuit,the method comprising: wherein said 3D Integrated Circuit comprises atleast a first strata and a second strata, providing placement data ofsaid first strata; performing a placement of said second strata using a2D placer executed by a computer, wherein said placement of said secondstrata is based on said placement data, wherein said 2D placer is aComputer Aided Design (CAD) tool for two-dimensional devices, andwherein said second strata comprises first routing layers; andperforming a routing of said second strata routing layers using a 2Drouter executed by said computer, wherein said 2D router is a ComputerAided Design (CAD) tool for two-dimensional devices.
 8. The methodaccording to claim 7, wherein a majority of said first strata comprisesmemory.
 9. The method according to claim 7, wherein results of saidfirst strata is a generic platform.
 10. The method according to claim 7,wherein said first strata is designed to be processed in a differentprocess than said second strata.
 11. The method according to claim 7,wherein said first strata comprises memory DRAM.
 12. The methodaccording to claim 7, wherein said first strata comprises Spin-TransferTorque RAM (STT-RAM).
 13. The method according to claim 7, wherein saidfirst strata comprises input and output cells (“IO”).
 14. The methodaccording to claim 7, wherein said first strata comprises RF (RadioFrequency) circuits.
 15. A method of designing a 3D Integrated Circuit,the method comprising: providing a device design, a first library, and asecond library; performing a synthesis step utilizing at least twolibraries, wherein said synthesis step results in a first netlist and asecond netlist; then performing a first placement of a first strata forsaid first netlist using a 2D placer executed by a computer, whereinsaid 2D placer is a Computer Aided Design (CAD) tool for two-dimensionaldevices; performing a second placement of a second strata for saidsecond netlist using said 2D placer executed by said computer, whereinsaid 2D placer is a Computer Aided Design (CAD) tool for two-dimensionaldevices.
 16. The method according to claim 15, wherein said secondplacement is based on said first placement.
 17. The method according toclaim 15, wherein said first library represents a first manufacturingprocess, wherein said second library represents a second manufacturingprocess, and wherein said first manufacturing process is different fromsaid second manufacturing process.
 18. The method according to claim 15,wherein said first library represents a first manufacturing process,wherein said second library represents a second manufacturing process,and wherein said first manufacturing process is a more advanced processnode than said second manufacturing process.
 19. The method according toclaim 15, wherein said first library represents low power cells, andwherein said second library represents high speed cells.
 20. The methodaccording to claim 15, wherein said first library represents highdensity cells, and wherein said second library represents high speedcells.